News in Press-centre

Researchers of Far Eastern Federal University (FEFU) won a joint grant from the Russian Foundation for Basic Research (RFBR) and the National Natural Science Foundation of China. Financial support will help to deepen the research of multi-layer magnetic structures for a new type of electronics (spin-orbitronics): energy-efficient and ultra-fast devices for information processing and artificial intelligence.

According to Alexander Samardak, Project Manager, Lead Researcher, Laboratory of Thin Film Technologies, FEFU School of Natural Sciences, the creation and research of new materials for spin-orbitronics cause interest of leading scientific groups from various countries. The research is not only fundamental, but are more focused on the creation of energy-efficient and ultra-fast storage and logical devices. New technologies will reduce the size of the memory cell and increase the speed of information processing.

"Spin-orbitronics is one of the most promising areas of modern science. Thanks to the latest developments, to switch the magnetization—a bit of data—no external magnetic fields in the memory cells are needed anymore, but rather the use of electrical impulses. The memory cells can become much smaller, while the speed of their work will multiply in comparison with the existing analogues," added Alexander Samardak

The Russian–Chinese grant will allow FEFU researchers to conduct tests and obtain new data in the laboratory for low-temperature studies at the Institute of Physics, Chinese Academy of Sciences. The collaboration of colleagues from the PRC in FEFU and bilateral scientific seminars are also planned.

The creation and study of materials for a new type of electronics is one of the breakthrough courses of action of the Far Eastern Federal University researchers. For example, the employees of the Laboratory of Thin Film Technologies were the first in the world to obtain ultra-thin materials of Ruthenium-Cobalt-Ruthenium composition just four atomic layers thick. The researchers have also obtained a working cell for vortex magnetoresistive memory based on magnetic nanodiscs, which can be used to create computers that use ternary logic.